Coaxial solder bump support structure

ABSTRACT

A solder bump support structure and method of manufacturing thereof is provided. The solder bump support structure includes an inter-level dielectric (ILD) layer formed over a silicon substrate. The ILD layer has a plurality of conductive vias. The structure further includes a first insulation layer formed on the ILD layer. The solder bump support structure further includes a pedestal member formed on the ILD layer which includes a conductive material formed above the plurality of conductive vias in the ILD layer coaxially surrounded by a second insulation layer. The second insulation layer is thicker than the first insulation layer. The structure further includes a capping under bump metal (UBM) layer formed over, and in electrical contact with, the conductive material and formed over at least a portion of the second insulation layer of the pedestal member.

CROSS REFERENCE TO RELATED APPLICATIONS

The present application is a divisional and claims priority under 35U.S.C. §120 of U.S. patent application Ser. No. 13/194,616, filed onJul. 29, 2011, which is incorporated by reference in its entirety.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates generally to the formation of solderjoints to electrodes on a substrate, and more particularly, to coaxialsolder bump support structures and method of manufacturing the same.

2. Description of the Related Art

Solder bumps are commonly used as an electrical connection betweensemiconductor chips and ceramic or organic substrates used to connect tothe outside world. There are a variety of techniques that may beemployed to connect the solder bump to the chip. One such techniqueutilizes one or more layers of protective material coated onto thefinished chip to protect the last level of metallization from mechanicalhandling damage and corrosion or oxidation. This technique typicallyinvolves forming a via in the protective material in order to connectthe solder to the last metallization layer. Once the solder bumps aredeposited onto the chip, the chip is then joined to the substrate bypositioning the chip so that the solder bumps are aligned with theappropriate pads on the substrate, then heated in a furnace to above themelting point of the solder. Because the substrate has a much largercoefficient of thermal expansion (CTE) than the chip, the substratetypically shrinks more than the chip during cooling to room temperature,causing shear stresses to develop on the solidified solder bumps. As thedifference in the relative displacement between the surface of thesubstrate and that of the chip varies in proportion to the distance fromthe center of the chip, the outermost solder bumps experience thelargest shear stresses.

The shear stresses resulting from the CTE mismatch exert a rotatingmoment on the solder bumps that is perpendicular to the radial directionfrom the center of the chip and the solder bump. This rotational energytypically causes tensile stress to be concentrated at the outer edge ofthe solder bump where it comes into contact with the chip, and thistensile stress acts to pull the solder away from the surface of thechip. If the last insulating layer on the chip is more compliant thanthe hard dielectrics that form the wiring insulation (for example, ifthe last insulation layer is a polyimide), the insulating layer can flexslightly in such a way that under repeated thermal cycles, or evenduring the cool down process from chip joining, the tensile stress canbe transferred from the interface between the last conductive layer andthe softer dielectric inward to the edge of the via. When either theabove described heat treatment steps are repeated a large number ofcycles or the tensile stress is of great enough magnitude, thermallyinduced solder bump cracks will result.

The mechanical properties of the protective insulator material that isfound between the last metallization level and the solder bump play alarge role in the amount of stress transferred to the chip. If theprotective insulator level is more elastic, the solder bump and itscorrelating bump pad is able to flex more with the higher CTE substrate.Different types of protective insulator materials have their ownadvantages and disadvantages. For example, some protective insulatormaterials may have a very beneficial elasticity but also have a veryhigh residual stress, which causes excessive wafer warp and bow. Theterm “warp”, as used herein, refers to the maximum deviation between anylocation on a wafer and a plane passing through the center of gravity ofthe wafer mounted free of forces. The term “bow”, as used herein, refersto the maximum deviation between any location on a wafer mounted free offorces and a plane which is defined by three points on the wafer formingan isosceles triangle. The bow is generally included in the warp andcannot be greater than the warp.

Typically, thickening the protective insulator material also proves tobe beneficial for mitigating the stresses caused by the CTE mismatch ofthe chip and the substrate, but, unfortunately, this technique alsoincreases the warp of the wafer as a whole. One should keep the bow andwarp of the wafer within specifications to ensure that the subsequentsemiconductor processing operations can be performed. Accordingly, it isdesirable to provide solder bump support structures and method forfabricating those solder bump support structures with reduced wafer bowand warp.

SUMMARY OF THE INVENTION

In an aspect of the present invention, a solder bump support structureincludes an inter-level dielectric (ILD) layer formed over a siliconsubstrate having a plurality of conductive vias. The solder bump supportstructure further includes a first insulation layer formed on the ILDlayer. The solder bump support structure further includes a pedestalmember formed on the ILD layer which includes a conductive materialformed above the plurality of conductive vias surrounded by a secondinsulation layer, wherein the second insulation layer is thicker thanthe first insulation layer. The solder bump support structure furtherincludes a capping under bump metal (UBM) layer formed over, and inelectrical contact with, the conductive material and formed over atleast a portion of the second insulation layer of the pedestal member.

In another aspect of the present invention, a method for fabricating asolder bump support structure includes forming an inter-level dielectric(ILD) layer over a silicon substrate. The method further includesforming an insulation layer over the ILD layer. The method furtherincludes forming a plurality of via openings in the ILD layer. Theplurality of via openings exposes a conductive portion of the siliconsubstrate. The method further includes filling the plurality of openingsin the insulation layer and the plurality of via openings in the ILDlayer with a conductive material. The method further includes forming aplurality of pedestal members above the plurality of via openings byselectively patterning the insulation layer. The method further includesforming a capping under bump metal (UBM) layer over, and in electricalcontact with, the conductive material and over at least a portion of theinsulation layer of the pedestal member.

A more complete understanding of the present invention, as well asfurther features and advantages of the present invention, will beobtained by reference to the following detailed description anddrawings. It is to be understood that both the foregoing generaldescription and the following detailed description are exemplary andexplanatory only, and should not be considered restrictive of the scopeof the present invention, as described and claimed. Further, features orvariations may be provided in addition to those set forth herein. Forexample, embodiments of the present invention may be directed to variouscombinations and sub-combinations of the features described in thedetailed description.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

The present invention is described in the detailed description whichfollows in reference to the noted plurality of drawings by way ofnon-limiting examples of exemplary embodiments of the present invention.

FIGS. 1 through 12 schematically illustrate method steps for fabricationof a solder bump support structure in accordance with an embodiment ofthe disclosure;

FIG. 13A illustrates a top view of a solder bump support structure priorto a solder bump formation step in accordance with an embodiment of thepresent invention; and

FIG. 13B illustrates a top view of a solder bump support structurefollowing the solder bump formation step in accordance with anembodiment of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

The present invention relates to a structure and method of forming asolder bump support structure. More specifically, the present inventionincludes an inter-level dielectric (ILD) layer formed over a siliconsubstrate having a plurality of conductive vias. The solder bump supportstructure further includes a first insulation layer formed on the ILDlayer. The solder bump support structure further includes a pedestalmember formed on the ILD layer containing a conductive material formedabove the plurality of conductive vias surrounded by a second insulationlayer, wherein the second insulation layer is thicker than the firstinsulation layer. The solder bump support structure further includes acapping under bump metal (UBM) layer formed over, and in electricalcontact with, the conductive material and formed over at least a portionof the second insulation layer of the pedestal member. Advantageously,by removing the majority of the insulation layer between the pedestalmembers, the structure of the present invention is an improvement overprior art as it allows one to substantially reduce the amount of warpinduced on the wafer due to the high stresses of the thick protectiveinsulator.

In embodiments, the structure of the present invention is an improvementover prior art as it allows one to reduce the thickness of protectiveinsulator material between the pedestal member structures and, as aresult, allows one to use more stressful protective insulator materials.Generally, the amount of warp induced on a wafer is directlyproportional to the thickness of protective insulator material presentacross the surface of the wafer (approximately 1:1 ratio). Therefore,for illustration purposes only, if a prior art method of covering theentire wafer with a protective insulator material of substantiallyuniform thickness imparts, for example, a 200 micron of bow on thewafer, the structure of the present invention may allow one to reducethe total amount of protective insulator by 50%, in turn, reducing theimparted bow to 100 microns. Another advantage of the present inventionis that the method of forming a solder ball support structure disclosedherein utilizes excimer laser pulse technology, which allows one toperform depth-specific patterned etching of the protective insulatormaterial. Furthermore, the use of an excimer laser as disclosed hereinimproves the solder bump support structure by allowing one to formsubstantially vertical via sidewalls in the protective insulatormaterial.

FIGS. 1 through 12 schematically illustrate method steps for fabricationof a solder bump support structure in accordance with an embodiment ofthe present invention.

Referring to FIG. 1, the method in accordance with this exemplaryembodiment of the present invention begins with a deposition of an ILDlayer 102. ILD layer 102 may include a material, such as, but notlimited to silicon nitride, to assist in the formation of subsequentlayers as is known in the art. ILD material 102 may be deposited viaplasma enhanced chemical vapor deposition (PECVD) or via low pressurechemical vapor deposition (LPCVD) procedures to a thickness betweenabout 0.1 to 5 microns. It should be noted that ILD layer 102 mayinclude multiple layers of ILD materials. Additional ILD layers mayinclude, for example, but not limited to, silicon oxide, or ofborophosphosilicate glass (BPSG). The lowest ILD layer may be overlyingand contacting a conductive region in a semiconductor substrate. This isnot shown in the drawings.

Still referring to FIG. 1, an anisotropic reactive ion etching (RIE)procedure is next performed using, for example, a mask, and using CHF₃as an etchant for ILD layer 102, creating via openings 104, shownschematically in FIG. 1. Via openings 104 have an area in the range fromabout 1 to about 750 square microns.

Once via openings 104 are formed, an insulation layer 202 is formed soas to cover ILD layer 102 and fill via openings 104, as shown in FIG. 2.In one embodiment, insulation layer 202 includes a film of spin-onprotective insulator. It should be noted that the protective insulatorfilm may be applied in many coats to improve planarization. In thiscase, a first coat is spun on ILD layer 102, which should be precured; asecond coat is spun on overtop of the underlying precured coat, which isprecured; a third coat is spun on overtop of the underlying precuredcoat, which is precured; etc., after which the entire precuredmulticoated insulation layer 202 is cured in a furnace as known in theart. In some embodiments, insulation layer 202 may include an insulatinglayer in the form of a dry film. Illustrative examples of the type offilms that may be used to form insulation layer 202 include, but are notlimited to, polymeric films such as polyimide, poly(benzoxazole),polynorbornene, acyrolates, epoxies, acrylics, silicones,benzocyclobutene-based polymers, and the like. Insulation layer 202 maybe formed to a thickness in the range from about 1 to about 25 microns.

After that, conductive via openings 302, which expose via openings 104in the ILD layer 102, are formed in the insulation layer 202, as shownin FIG. 3. A pulsed excimer laser may be utilized in this step becauseof its unique advantageous characteristics discussed below, which lendthemselves to efficient laser etching of protective insulator film withfew drawbacks. Pulsed excimer laser is capable of emitting acharacteristic wavelength which is within the absorption spectrum of theprotective insulator material 202. If an excimer laser is used, a maskof a conventional type (not shown), which includes, for example, but notlimited to, a UV grade quartz substrate having a patterned aluminum ordielectric film thereon, may be utilized in this step. The mask will betransparent to the laser light in the regions where there is no aluminumor dielectric film and opaque in the regions where the aluminum ordielectric is present. As a result, light from the laser will betransmitted by the mask in a pattern corresponding to the transparentregions of the mask. In this case, transparent regions of the mask willcorrespond to the desired pattern of conductive via openings 302.

When pulsed excimer laser radiation strikes protective insulator 202,protective insulator 202 will, due to absorption of the radiation,undergo thermal and electronic excitation and, ultimately, vaporizethereby exposing a new layer of protective insulator 202 in accordancewith the desired pattern. Protective insulator layer 202 in the regions,which were not irradiated, remains unaffected. The newly exposedprotective insulator is once again irradiated with another pulse ofexcimer laser radiation and ablated. In this manner, protectiveinsulator 202 is etched layer by layer until the entire protectiveinsulator is etched through forming the desired conductive via openings302 pattern, as shown in FIG. 3.

The etch rate of protective insulator 202 is a function of severalparameters including the temperature and pressure in the reactionchamber, the energy density, wavelength, pulse width and repetition rateof the excimer laser, and the density of the protective insulator 202.Typically, these parameters depend largely on the materials selected forprotective insulator layer 202.

Turning now to FIG. 4, a continuous layer 402 of a conductive material,such as copper (Cu) may be plated on the protective insulator film 202.It should be understood that a layer of a liner material (not shown) maybe deposited prior to plating the conductive material. The exemplarycopper metal layer 402 may be formed by contacting the protectiveinsulator film 202 with a copper plating bath in a processing systemconfigured for copper plating and annealing. The copper plating processmay be an electrochemical copper plating process or electroless copperplating process. The conductive material layer 402 may have a thicknessin the range from about 1 to about 25 microns. According to embodimentsof the present invention, the conductive material layer 402 completelyfills via openings 302 in the protective insulator layer 202, as well asvia openings 104 in the ILD layer 102, as depicted in FIG. 4. Accordingto embodiments of the present invention, following deposition of theconductive material layer 402, it may be annealed in a non-oxidizing gasto improve material properties of the metal.

FIG. 5 illustrates a next step in the process. Copper chemicalmechanical planarization (CMP) is used to remove the copper layer 402from the protective insulator 202 surface while maintaining copper 402in conductive vias 302 through the protective insulator layer 202 andconductive vias 104 through the ILD layer 102.

FIG. 6 illustrates a next step in the process of forming the solder bumpsupport structure. A plurality of pedestal members 602 is formed byutilizing a pulsed excimer laser technique once again, as discussedabove in conjunction with FIG. 3. In this case, a conventional mask withopaque regions corresponding to the desired shapes of the pedestalmembers 602 may be utilized. Protective insulator material 202 is etchedaway layer by layer until a layer 604 of protective insulator having thethickness in the range from about 0.1 to about 5 microns is left betweenthe formed pedestal members 602. It should be noted that the thicknessof layer 604 is less than the height of pedestal members 602. Aplurality of solder bumps will be formed over the plurality of pedestalmembers 602, as discussed further below in conjunction with FIGS. 8-12.

Next, an under bump metal (UBM) layer 702 is deposited to provide athickness in the range from about 0.1 to about 2 microns, as shown inFIG. 7. Different methods of providing under bump metal deposition areknown in the art. Usually UBM is sputtered or evaporated. The UBMdeposition provides a barrier to protect the pedestal members 602. TheUBM deposition also provides better adhesion between solder bumps andthe pedestal members 602. Generally, UBM deposition includes a layeredstack of various combinations of metals. Preferably, such stacks are twoor three layer stacks. Various metal combinations are known in the artto be used for UBM deposition. Such combinations may bealuminum/nickel-vanadium/copper, aluminum/nickel/copper,titanium/copper, chromium/chromium-copper/copper, and nickel/gold. Thenickel/gold deposition may be deposited by electroless plating in thepreferred embodiment to form nickel/gold UBM.

FIG. 8 shows a thick layer of a photoresist 802 which may be applied byspin coating, either by a single spin or multiple spin of liquid resistto provide a thickness in the range from about 1 to about 150 microns.Alternatively, a dry film may be laminated directly. This photoresistlayer 802 may be patterned by selectively exposing it to ultra violet(or visible) light through a photomask having openings arranged thereinat the appropriate locations to define the areas to be bumped 804, anddeveloping the exposed photoresist to create the desired pattern ofphotoresist. Typical parameters for forming the thick photoresist layer802 are well known in the art.

The exposed UBM 702 is then provided with the solder bump 902, asindicated in FIG. 9. The solder bump 902 may include a variety ofcompositions. Lead/tin alloys are the most commonly employed, inparticular eutectic lead/tin, although, increasingly, other soldercompositions are utilized. Other solder compositions may include, forexample, but not limited to, pure tin, tin-copper alloys, tin-silveralloys, tin-bismuth alloys, tin-silver-copper alloys, or the like. Thesolder bump 902 may be applied by a variety of techniques, such asscreen printing or solder ball placement, but electroplating is the mostcommon technique. The electroplating of eutectic lead/tin is welldocumented.

Following the plating of the bumps, FIG. 10 shows the photoresist 802removed. This may be achieved using a chemical technique employing aliquid stripper as well known in the art. In another embodiment,photoresist layer 802 may be removed by using exposure and development.

After removal of the photoresist layer 802, as shown in FIG. 11, the UBMlayer 702 is subject to an etching process, such as, but not limited to,wet etching or RIE, to the underlying protective insulator layer 202using the solder column 902 as an etching mask to protect the underlyingUBM layer 702. Following the step of etching the UBM layer 702, thesolder column 902 is then temporarily heated to a melting point(“reflow”) such that surface tension effects create a substantiallyspherical solder bump 902 over UBM layer 702, as depicted in FIG. 12.

FIG. 12 shows the final solder bump support structures. As can be seenin FIG. 12, a plurality of pedestal members 602 are formed over the ILDlayer 102. Pedestal members 602 include a conductive via 302 coaxiallysurrounded by a thick protective insulator layer 202. Conductive via 302is used to provide electrical contact between a solder bump 902positioned on the capping UBM layer 702 and the plurality of conductivevias 104 in the ILD layer 102, which in turn are connected to underlyingmetal interconnect layers. It should be noted that protective insulatorlayer 604 surrounding pedestal members 602 is substantially thinner thanprotective insulator layer 202 that is part of the pedestal member 602.

FIG. 13A illustrates a top view of a solder bump support structure priorto a solder bump formation step. In an exemplary embodiment, as shown inFIG. 13A, a plurality of pedestal members 602 are rising up from theunderlying wafer having substantially cylindrical shape. In thisexemplary embodiment, conductive via 302 may have a diameter 1302 in therange from about 5 to about 55 microns. As depicted in FIG. 13A, thering-shaped capping UBM layer 702 covers a portion of the conductivematerial layer 402 contained in the conductive via 302 and at least aportion of the protective insulator layer 202 of the pedestal member602. The outer diameter 1304 of the UBM layer 702 may be in the rangefrom about 10 to about 120 microns. The protective insulator layer 202of the cylindrically shaped pedestal member 602 may have an outerdiameter 1306 in the range from about 20 to about 135 microns.Furthermore, in this exemplary embodiment, the distance 1308 between thecenters of the adjacent pedestal members 602 may be, for example, butnot limited to, about 150 microns. While in the exemplary embodiment thepedestal support member 602 has a substantially cylindrical shape, thepresent invention is not so limited. Those of ordinary skill in the artwill recognize that in other embodiments the pedestal support member 602may have other shapes.

FIG. 13B illustrates a top view of a solder bump support structurefollowing the solder bump formation step in accordance with anembodiment of the present invention. As shown in FIG. 13B substantiallyspherical solder bumps 902 are formed over UBM layer (not shown) on thetop surface of each pedestal member 602.

Thus, as described above, the present invention relates to a structureand a method of forming a solder bump support structure. It has thusbeen discovered that the present invention has numerous advantages. Aprinciple advantage is that by utilizing a thick layer of protectiveinsulator film 202 within a structure of plurality of pedestal members602, where the solder bump 902 protection is needed the most, andreducing the thickness of the protective insulator on the surface of thechip 604, between pedestal members 602, the wafer warp caused by theprotective insulator film is substantially reduced when compared toprior art methods of forming solder bump support structures.Accordingly, the reliability concerns associated with prior art methodsof forming solder bump structures can be avoided.

Another advantage is that utilization of etching methodology presentedherein enables a reduction in the process steps required to form apedestal member.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of the presentinvention. As used herein, the singular forms “a”, “an” and “the” areintended to include the plural forms as well, unless the context clearlyindicates otherwise.

The corresponding structures, materials, acts, and equivalents of allmeans or step plus function elements, if any, in the claims below areintended to include any structure, material, or act for performing thefunction in combination with other claimed elements as specificallyclaimed. The description of the present invention has been presented forpurposes of illustration and description, but is not intended to beexhaustive or limited to the present invention in the form disclosed.Many modifications and variations will be apparent to those of ordinaryskill in the art without departing from the scope and spirit of thepresent invention. The embodiments were chosen and described in order tobest explain the principles of the present invention and the practicalapplication, and to enable others of ordinary skill in the art tounderstand the present invention for various embodiments with variousmodifications as are suited to the particular use contemplated.

What is claimed is:
 1. A solder bump support structure comprising: aninter-level dielectric (ILD) layer formed over a silicon substrate,wherein the ILD layer includes a plurality of conductive vias; a firstinsulation layer formed on the ILD layer; a pedestal member formed onthe ILD layer comprising a conductive material formed above theplurality of conductive vias coaxially surrounded by a second insulationlayer in direct physical contact with the conductive material of thepedestal member, wherein the first insulation layer and the secondinsulation layer are part of a same layer, wherein the first insulationlayer extends horizontally from a lower portion of the second insulationlayer along and in direct physical contact with a top surface of the ILDlayer, and wherein the second insulation layer is thicker than the firstinsulation layer; and a capping under bump metal (UBM) layer formedover, and in electrical contact with, the conductive material and indirect physical contact with only a portion of an uppermost surface ofthe second insulation layer of the pedestal member.
 2. The solder bumpsupport structure of claim 1, wherein the thickness of the firstinsulation layer ranges from about 0.1 to about 5 microns.
 3. The solderbump support structure of claim 1, wherein the thickness of the secondinsulation layer ranges from about 1 to about 25 microns.
 4. The solderbump support structure of claim 1, wherein the first insulation layercomprises a spin-on polymer.
 5. The solder bump support structure ofclaim 1, wherein the first insulation layer comprises a dry-filmpolymer.
 6. The solder bump support structure of claim 1, wherein theconductive material comprises a via providing electrical contact betweenthe capping UBM layer and the plurality of conductive vias in the ILDlayer.
 7. The solder bump support structure of claim 1, wherein theconductive material comprises copper.
 8. The solder bump supportstructure of claim 1, wherein the pedestal member is shaped as acylinder and the capping UBM is shaped as a ring, and wherein theconductive material of the pedestal member includes a pair of opposingvertical sidewalls which are each substantially perpendicular to thesilicon substrate.
 9. The solder bump support structure of claim 8,wherein an outer diameter of the capping UBM layer ranges between about10 to about 120 microns.
 10. The solder bump support structure of claim8, wherein a diameter of the second insulation layer ranges betweenabout 20 to about 135 microns.
 11. A structure comprising: a pedestalmember comprising a conductive material coaxially surrounded by aprotective insulator material in direct physical contact with theconductive material of the pedestal member, the pedestal member beingabove an inter-level dielectric layer; an insulator layer above theinter-level dielectric layer and adjacent to the pedestal member,wherein the protective insulator material and the insulator layer arepart of a same layer, wherein the insulator layer extends horizontallyfrom a lower portion of the protective insulator material along and indirect physical contact with a top surface of the inter-level dielectriclayer, the insulator layer being the same material as the protectiveinsulator material of the pedestal member, and a height of the insulatorlayer above the inter-level dielectric is less than a height of thepedestal member; a solder bump above the pedestal member, the solderbump being in electrical contact with the conductive via of the pedestalmember; and an under bump metal layer between the pedestal member andthe solder bump, the under bump metal layer being in direct physicalcontact with only a portion of an uppermost surface of the protectiveinsulator material.
 12. The structure of claim 11, wherein theinter-level dielectric layer comprises a conductive via in electricalcontact with the conductive material of the pedestal member.
 13. Thestructure of claim 11, wherein the protective insulator material of thepedestal member comprises substantially vertical sidewalls.
 14. Thestructure of claim 11, wherein the conductive material is an electricalpath between the solder bump and the conductive via.
 15. The structureof claim 11, wherein the pedestal member is shaped as a cylinder, andthe under bump metal layer is shaped as a ring, and wherein theconductive material of the pedestal member includes a pair of opposingvertical sidewalls which are each substantially perpendicular to thesilicon substrate.
 16. A structure comprising: a pedestal membercomprising a conductive material coaxially surrounded by a protectiveinsulator material in direct physical contact with the conductivematerial of the pedestal member, the pedestal member being above aninter-level dielectric layer; an insulator layer above the inter-leveldielectric layer and adjacent to the pedestal member, wherein theprotective insulator material and the insulator layer are part of a samelayer, wherein the insulator layer extends horizontally from a lowerportion of the protective insulator material along and in directphysical contact with a top surface of the inter-level dielectric layer,the insulator layer being the same material as the protective insulatormaterial of the pedestal member, and a height of the insulator layerabove the inter-level dielectric is less than a height of the pedestalmember; and an under bump metal layer above the pedestal member, theunder bump metal layer is in electrical contact with the conductivematerial of the pedestal member, and is in direct physical contact withonly a portion of an uppermost surface of the protective insulatormaterial of the pedestal member.
 17. The structure of claim 16, whereinthe inter-level dielectric layer comprises a conductive via inelectrical contact with the conductive material of the pedestal member.18. The structure of claim 16, further comprising: a solder bump abovethe pedestal member, the solder bump being in electrical contact withthe conductive via of the pedestal member.